Technique to deposit sidewall passivation for high aspect ratio cylinder etch

ABSTRACT

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reactants having low sticking coefficients in some embodiments. The protective coating may also be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. In some cases the protective coating is deposited using plasma assisted atomic layer deposition or plasma assisted chemical vapor deposition.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of and claims priority to U.S. patentapplication Ser. No. 14/560,414, titled “TECHNIQUE TO DEPOSIT SIDEWALLPASSIVATION FOR HIGH ASPECT RATIO CYLINDER ETCH,” filed Dec. 4, 2014,all of which is incorporated herein by this reference and for allpurposes.

BACKGROUND

One process frequently employed during fabrication of semiconductordevices is formation of an etched cylinder in dielectric material.Example contexts where such a process may occur include, but are notlimited to, memory applications such as DRAM and 3D NAND structures. Asthe semiconductor industry advances and device dimensions becomesmaller, such cylinders become increasingly harder to etch in a uniformmanner, especially for high aspect ratio cylinders having narrow widthsand/or deep depths.

SUMMARY

Certain embodiments herein relate to methods and apparatus for formingan etched feature in dielectric material on a semiconductor substrate.The disclosed embodiments may utilize certain techniques to deposit apassivating material on sidewalls of the etched feature, therebyallowing etch to occur at high aspect ratios.

In one aspect of the embodiments herein, a method is provided forforming an etched feature in dielectric material on a semiconductorsubstrate, the method including: (a) generating a first plasma includingan etching reactant, exposing the substrate to the first plasma, andpartially etching the feature in the dielectric material; (b) after (a),depositing a protective film on sidewalls of the feature, where theprotective film is deposited along substantially the entire depth of thefeature; (c) repeating (a)-(b) until the feature is etched to a finaldepth, where the protective film deposited in (b) substantially preventslateral etch of the feature during (a), and where the feature has anaspect ratio of about 5 or greater at its final depth.

In certain embodiments, the protective film is formed using precursorshaving a sticking coefficient of about 0.05 or less under conditionsused to deposit the protective film. At the final depth, the feature mayhave an aspect ratio of about 20 or greater, and a bow of about 20% orless.

The disclosed embodiments may be used in a variety of contexts. In somecases, the feature is formed in the context of forming a VNAND device,where the dielectric material includes alternating layers of (i) anoxide material, and (ii) a nitride material or polysilicon material. Insome other cases, the feature is formed in the context of forming a DRAMdevice, where the dielectric material includes silicon oxide.

In various implementations, operation (b) includes depositing theprotective film through a plasma assisted atomic layer depositionreaction including: (i) exposing the substrate to a first depositionreactant and allowing the first deposition reactant to adsorb onto thesidewalls of the feature; (ii) after (i), exposing the substrate to asecond plasma including a second deposition reactant, where exposing thesubstrate to the second plasma drives a surface reaction between thefirst deposition reactant and the second deposition reactant, therebyforming the protective film on the sidewalls of the feature. The firstdeposition reactant includes a boron-containing reactant in some cases.Alternatively or in addition, the first deposition reactant may includea silicon-containing reactant. In certain embodiments, the seconddeposition reactant includes a nitrogen-containing reactant, and theprotective film includes boron nitride. In some cases, operation (a)further includes oxidizing the boron nitride protective film formed in(b) to form a boron oxide protective film. In some such cases, the firstdeposition reactant includes BCl₃, the second deposition reactantincludes N₂ and H₂, the etch reactant in (a) includes one or morefluorocarbons and O₂, and the method further includes during (a)oxidizing the boron nitride protective film to form boron oxide.

In some embodiments, operation (b) includes depositing the protectivefilm through a plasma assisted chemical vapor deposition reactionincluding exposing the substrate to a first deposition reactant and asecond deposition reactant while the substrate is exposed to a secondplasma, where the second plasma drives a reaction that results indeposition of the protective film on the sidewalls of the feature. Thefirst deposition reactant may include a boron-containing reactant and/ora silicon-containing reactant, and the protective film may be aboron-containing film and/or a silicon-containing film. In some cases,the first deposition reactant includes BCl₃, the second depositionreactant includes N₂ and H₂, and the protective film formed in (b) isboron nitride, where the etching reactant in (a) includes one or morefluorocarbons and O₂, and further including during (a), converting theboron nitride protective film to boron oxide. In various embodiments,the protective layer includes fluorocarbon polymer.

The feature may be a high aspect ratio feature. In some cases thefeature has an aspect ratio of at least about 5, for example at leastabout 10, at least about 20, at least about 30, at least about 40, atleast about 50, at least about 60, at least about 80, or at least about100. In a particular example the aspect ratio of the feature is at leastabout 50. Operations (a) and (b) may be repeated a number of times. Insome cases, (a) and (b) are repeated at least once. In some cases, (a)and (b) are repeated at least twice, at least three times, at least fivetimes, or at least ten times.

In another aspect of the disclosed embodiments, an apparatus for formingan etched feature in dielectric material on a semiconductor substrate isprovided, the apparatus including: one or more reaction chambers, whereat least one reaction chamber is designed or configured to performetching, and where at least one reaction chamber is designed orconfigured to perform deposition, each reaction chamber including: aninlet for introducing process gases to the reaction chamber, an outletfor removing material from the reaction chamber, and a plasma source;and a controller having instructions for: (a) generating a first plasmaincluding an etching reactant, exposing the substrate to the firstplasma, and partially etching the feature in the dielectric material,where (a) is performed in the reaction chamber designed or configured toperform etching; (b) after (a), depositing a protective film onsidewalls of the feature, where the protective film is deposited alongsubstantially the entire depth of the feature, and where (b) isperformed in the reaction chamber designed or configured to performdeposition; (c) repeating (a)-(b) until the feature is etched to a finaldepth, where the protective film deposited in (b) substantially preventslateral etch of the feature during (a), and where the feature has anaspect ratio of about 5 or greater at its final depth.

In some embodiments, the reaction chamber designed or configured toperform etching is the same reaction chamber designed or configured toperform deposition, such that both (a) and (b) occur in the samereaction chamber. In other embodiments, the reaction chamber designed orconfigured to perform etching is different from the reaction chamberdesigned or configured to perform deposition, and the controller furtherincludes instructions to transfer the substrate between the reactionchamber designed or configured to perform etching and the reactionchamber designed or configured to perform deposition.

These and other features will be described below with reference to theassociated drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an etched cylinder having an undesirable bow due toover-etching of the sidewalls.

FIG. 2 presents a flowchart for a method of forming an etched feature ona semiconductor substrate according to various disclosed embodiments.

FIGS. 3A-3D depict etched cylinders in a semiconductor substrate as thecylinders are cyclically etched and coated with a protective sidewallcoating according to various embodiments.

FIGS. 4A-4C illustrate a reaction chamber that may be used to performthe etching processes described herein according to certain embodiments.

FIG. 5 depicts a reaction chamber that may be used to perform thedeposition processes described herein according to certain embodiments.

FIG. 6 shows a multi-station apparatus that may be used to perform thedeposition processes in certain implementations.

FIG. 7 presents a cluster tool that may be used to practice bothdeposition and etching according to certain embodiments.

DETAILED DESCRIPTION

In this application, the terms “semiconductor wafer,” “wafer,”“substrate,” “wafer substrate,” and “partially fabricated integratedcircuit” are used interchangeably. One of ordinary skill in the artwould understand that the term “partially fabricated integrated circuit”can refer to a silicon wafer during any of many stages of integratedcircuit fabrication thereon. A wafer or substrate used in thesemiconductor device industry typically has a diameter of 200 mm, or 300mm, or 450 mm. The following detailed description assumes the inventionis implemented on a wafer. However, the invention is not so limited. Thework piece may be of various shapes, sizes, and materials. In additionto semiconductor wafers, other work pieces that may take advantage ofthis invention include various articles such as printed circuit boards,magnetic recording media, magnetic recording sensors, mirrors, opticalelements, micro-mechanical devices and the like.

In the following description, numerous specific details are set forth inorder to provide a thorough understanding of the presented embodiments.The disclosed embodiments may be practiced without some or all of thesespecific details. In other instances, well-known process operations havenot been described in detail to not unnecessarily obscure the disclosedembodiments. While the disclosed embodiments will be described inconjunction with the specific embodiments, it will be understood that itis not intended to limit the disclosed embodiments.

I. Technology for Etching High Aspect Ratio Features in a DielectricMaterial

Fabrication of certain semiconductor devices involves etching featuresinto a dielectric material or materials. The dielectric material may bea single layer of material or a stack of materials. In some cases astack includes alternating layers of dielectric material (e.g., siliconnitride and silicon oxide). One example etched feature is a cylinder,which may have a high aspect ratio. As the aspect ratio of such featurescontinues to increase, it is increasingly challenging to etch thefeatures into dielectric materials. One problem that arises duringetching of high aspect ratio features is a non-uniform etching profile.In other words, the features do not etch in a straight downwarddirection. Instead, the sidewalls of the features are often bowed suchthat a middle portion of the etched feature is wider (i.e., furtheretched) than a top and/or bottom portion of the feature. Thisover-etching near the middle portion of the features can result incompromised structural and/or electronic integrity of the remainingmaterial.

Without being bound by any theory or mechanism of action, it is believedthat the over-etching at the middle portion of the cylinder or otherfeature occurs at least partially because the sidewalls of the cylinderare insufficiently protected from etching. Conventional etch chemistryutilizes fluorocarbon etchants to form the cylinders in the dielectricmaterial. The fluorocarbon etchants are excited by plasma exposure,which results in the formation of various fluorocarbon fragmentsincluding, for example, CF, CF₂, and CF₃. Reactive fluorocarbonfragments etch away the dielectric material at the bottom of a feature(e.g., cylinder) with the assistance of ions. Other fluorocarbonfragments are deposited on the sidewalls of the cylinder being etched,thereby forming a protective polymeric sidewall coating. This protectivesidewall coating promotes preferential etching at the bottom of thefeature as opposed to the sidewalls of the feature. Without thissidewall protection, the feature begins to assume a non-uniform profile,with a wider etch/cylinder width where the sidewall protection isinadequate.

Sidewall protection is especially difficult to achieve in high aspectratio features. One reason for this difficulty is that existingfluorocarbon-based processes cannot form the protective polymericsidewall coating deep in the cylinder being etched. FIG. 1 presents afigure of a cylinder 102 being etched in a dielectric material 103coated with a patterned mask layer 106. While the following discussionsometimes refers to cylinders, the concepts apply to other featureshapes such as rectangles and other polygons. A protective polymericsidewall coating 104 is concentrated near the top portion of thecylinder 102. CH_(x)F_(y) chemistry provides both the etch reactant(s)for etching the cylinder vertically, as well as the reactant(s) thatform the protective polymeric sidewall coating 104. Because theprotective polymeric sidewall coating 104 does not extend deep into thecylinder (i.e., there is insufficient deposition on the sidewall), themiddle portion of the cylinder 102 becomes wider than the top portion ofthe cylinder 102. The wider middle portion of the cylinder 102 isreferred to as the bow 105. The bow can be numerically described interms of a comparison between the critical dimension of the feature atthe bow region and the critical dimension of the feature above the bowregion (e.g., the neck region). The bow may be numerically reported interms of distance (e.g., the critical dimension at the widest part ofthe feature minus the critical dimension at the narrowest part of thefeature above the bow) or in terms of a ratio/percent (the criticaldimension at the widest part of the feature divided by the criticaldimension at the narrowest part of the feature above the bow). This bow105, and the related non-uniform etch profile, is undesirable. Becauseof the high ion energies often used in this type of etching process,bows are often created when etching cylinders of high aspect ratios. Insome applications, bows are created even at aspect ratios as low asabout 5. As such, conventional fluorocarbon etch chemistry is typicallylimited to forming relatively low aspect ratio cylinders in dielectricmaterials. Some modern applications require cylinders having higheraspect ratios than those that can be achieved with conventional etchchemistry.

II. Context and Applications

In various embodiments herein, features are etched in a substrate(typically a semiconductor wafer) having dielectric material on thesurface. The etching processes are generally plasma-based etchingprocesses. The overall feature formation process may occur in stages:one stage directed at etching the dielectric material and another stagedirected at forming a protective sidewall coating without substantiallyetching the dielectric material. The protective sidewall coatingpassivates the sidewalls and prevents the feature from being over-etched(i.e., the sidewall coating prevents lateral etch of the feature). Thesetwo stages can be repeated until the feature is etched to its finaldepth. By cycling these two stages, the diameter of the feature can becontrolled over the entire depth of the feature, thereby formingfeatures having more uniform diameters/improved profiles.

A feature is a recess in the surface of a substrate. Features can havemany different shapes including, but not limited to, cylinders,rectangles, squares, other polygonal recesses, trenches, etc.

Aspect ratios are a comparison of the depth of a feature to the criticaldimension of the feature (often its width/diameter). For example, acylinder having a depth of 2 μm and a width of 50 nm has an aspect ratioof 40:1, often stated more simply as 40. Since the feature may have anon-uniform critical dimension over the depth of the feature, the aspectratio can vary depending on where it is measured. For instance,sometimes an etched cylinder may have a middle portion that is widerthan the top and bottom portions. This wider middle section may bereferred to as the bow, as noted above. An aspect ratio measured basedon the critical dimension at the top of the cylinder (i.e., the neck)would be higher than an aspect ratio measured based on the criticaldimension at the wider middle/bow of the cylinder. As used herein,aspect ratios are measured based on the critical dimension proximate theopening of the feature, unless otherwise stated.

The features formed through the disclosed methods may be high aspectratio features. In some applications, a high aspect ratio feature is onehaving an aspect ratio of at least about 5, at least about 10, at leastabout 20, at least about 30, at least about 40, at least about 50, atleast about 60, at least about 80, or at least about 100. The criticaldimension of the features formed through the disclosed methods may beabout 200 nm or less, for example about 100 nm or less, about 50 nm orless, or about 20 nm or less.

The material into which the feature is etched may be a dielectricmaterial in various cases. Example materials include, but are notlimited to, silicon oxides, silicon nitrides, silicon carbides,oxynitrides, oxycarbides, carbo-nitrides, doped versions of thesematerials (e.g., doped with boron, phosphorus, etc.), and laminates fromany combinations of these materials. Particular example materialsinclude stoichiometric and non-stoichiometric formulations of SiO₂, SiN,SiON, SiOC, SiCN, etc.

One application for the disclosed methods is in the context of forming aDRAM device. In this case, the feature may be etched primarily insilicon oxide. The substrate may also include one, two, or more layersof silicon nitride, for instance. In one example, a substrate includes asilicon oxide layer sandwiched between two silicon nitride layers, withthe silicon oxide layer being between about 800-1200 nm thick and one ormore of the silicon nitride layers being between about 300-400 nm thick.The etched feature may be a cylinder having a final depth between about1-3 μm, for example between about 1.5-2 μm. The cylinder may have awidth between about 20-50 nm, for example between about 25-30 nm. Afterthe cylinder is etched, a capacitor memory cell can be formed therein.

Another application for the disclosed methods is in the context offorming a vertical NAND (VNAND, also referred to as 3D NAND) device. Inthis case, the material into which the feature is etched may have arepeating layered structure. For instance, the material may includealternating layers of oxide (e.g., SiO₂) and nitride (e.g., SiN), oralternating layers of oxide (e.g., SiO₂) and polysilicon. Thealternating layers form pairs of materials. In some cases, the number ofpairs may be at least about 20, at least about 30, at least about 40, atleast about 60, or at least about 70. The oxide layers may have athickness between about 20-50 nm, for example between about 30-40 nm.The nitride or polysilicon layers may have a thickness between about20-50 nm, for example between about 30-40 nm. The feature etched intothe alternating layer may have a depth between about 2-6 μm, for examplebetween about 3-5 μm. The feature may have a width between about 50-150nm, for example between about 50-100 nm.

III. Etching/Deposition Process

FIG. 2 presents a flowchart for a method of forming an etched feature ina semiconductor substrate. The operations shown in FIG. 2 are describedin relation to FIGS. 3A-3D, which show a partially fabricatedsemiconductor substrate as the feature is etched. At operation 201, afeature 302 is etched to a first depth in a substrate having dielectricmaterial 303 and a patterned mask layer 306. This first depth is only afraction of the final desired depth of the feature. The chemistry usedto etch the feature may be a fluorocarbon-based chemistry (CH_(x)F_(y)).Other etch chemistries may be used. This etching operation 201 mayresult in formation of a first sidewall coating 304. The first sidewallcoating 304 may be a polymeric sidewall coating, as described withrelation to FIG. 1. The first sidewall coating 304 extends toward thefirst depth, though in many cases the first sidewall coating 304 doesnot actually reach the bottom of the feature 302.

The first sidewall coating 304 indirectly forms from the CH_(x)F_(y)etching chemistry as certain fluorocarbon species/fragments deposit onthe sidewalls of the feature (i.e., certain fluorocarbon species areprecursors for the first sidewall coating 304). One reason that thefirst sidewall coating 304 does not reach the bottom of the feature 302may relate to the sticking coefficient of the precursors that form thecoating. In particular, it is believed that for certain etchants thesticking coefficient of these first sidewall coating precursors is toohigh, which causes the substantial majority of the precursor moleculesto attach to the sidewalls soon after entering the feature. As such, fewsidewall coating precursor molecules are able to penetrate deep into thefeature where sidewall protection is beneficial. The first sidewallcoating 304 therefore provides only partial protection againstover-etching of the sidewalls of the feature 302. In someimplementations, the etch conditions provide little if any sidewallprotection.

Next, at operation 203 the etching process is stopped. After the etchingis stopped, a second sidewall coating 310 is deposited in operation 205.In some cases, the second sidewall coating 310 may be effectively thefirst sidewall coating. This deposition may occur through variousreaction mechanisms including, but not limited to, chemical vapordeposition (CVD) methods and atomic layer deposition (ALD) methods(either of which may be plasma-assisted). ALD methods are particularlywell suited for forming conformal films that line the sidewalls of thefeatures. For instance, ALD methods are useful for delivering reactantsdeep into features due to the adsorption-driven nature of such methods.While the embodiments herein are not limited to methods in which thesecond sidewall coating 310 is deposited through ALD, the method chosento deposit the second sidewall coating 310 should allow for theprotective layer to be formed deep in the etched feature 302. CVD andother deposition processes may be suitable in various implementations.

In certain embodiments, the second sidewall coating 310 is depositedusing a reactant having a relatively low sticking coefficient (e.g., asilicon-containing reactant and/or a boron-containing reactant). Thesticking coefficient should be low with respect to whatever species ispresent on the sidewalls at the time the reactant is delivered (e.g.,the sticking coefficient may be low with respect to the native sidewallsand/or any species present on the sidewalls). Further, the stickingcoefficient is that the coating species actually contact the sidewalls;such species may not be the reactant that enters the chamber. In oneembodiment where the second sidewall coating 310 is deposited throughALD methods, the deposition in operation 205 includes (a) flowing a lowsticking coefficient reactant into the reaction chamber and allowing thereactant to adsorb onto the surface of the substrate, thereby forming anadsorbed precursor layer 312; (b) optionally purging the reactionchamber (e.g., by sweeping with a purge gas, evacuating the reactionchamber, or both); (c) exposing the substrate to a plasma generated froman oxygen-containing and/or nitrogen-containing reactant (often providedwith hydrogen, as well) to thereby drive a surface reaction to form alayer of the second sidewall coating 310 (this second sidewall coating310 is typically an etch resistant film); (d) optionally purging thereaction chamber; and (e) repeating (a)-(d) to form additional layers ofthe second sidewall coating 310. The adsorbed precursor layer 312 isshown in FIG. 3B, and the second sidewall coating 310 is shown in FIG.3C. The precursor adsorption (FIG. 3B) and film formation (FIG. 3C) maybe cycled a number of times to form a film having a desired thickness.

In another embodiment where the second sidewall coating 310 is depositedthrough CVD methods, the deposition may include flowing a low stickingcoefficient reactant into the reaction chamber, optionally with aco-reactant (e.g., an oxygen-containing reactant and/or anitrogen-containing reactant, optionally provided with hydrogen), whileexposing the substrate to plasma. The plasma drives a gas phase reactionthat results in deposition of the second sidewall coating 310. In thisexample, the method is represented by FIGS. 3A, 3C, and 3D (no adsorbedprecursor layer 312 is formed, thus FIG. 3B is omitted).

Sticking coefficient is a term used to describe the ratio of the numberof adsorbate species (e.g., atoms or molecules) that adsorb/stick to asurface compared to the total number of species that impinge upon thatsurface during the same period of time. The symbol S_(c) is sometimesused to refer to the sticking coefficient. The value of S_(c) is between0 (meaning that none of the species stick) and 1 (meaning that all ofthe impinging species stick). Various factors affect the stickingcoefficient including the type of impinging species, surfacetemperature, surface coverage, structural details of the surface, andthe kinetic energy of the impinging species. Certain species areinherently more “sticky” than others, making them more likely to adsorbonto a surface each time the specie impinges on the surface. These moresticky species have greater sticking coefficients (all other factorsbeing equal), and are more likely to adsorb near the entrance of arecessed feature compared to less sticky species having lower stickingcoefficients. The fluorocarbon species such as those employed inconventional etch processes (and may form the first sidewall coating304) have relatively high sticking coefficients, and therefore becomeconcentrated near the top of the feature 302 where they first impingeupon the sidewalls. By comparison, species having lower stickingcoefficients, even if they impinge upon the surface near the top of thesidewalls, are less likely to adsorb during each impact, and thereforehave a greater probability of reaching the bottom portion of the feature302.

In certain embodiments, silicon-containing reactants andboron-containing reactants are used to form the second sidewall coating310 and have lower sticking coefficients than the fluorocarbon speciesthat form the first sidewall coating 304. As such, these reactants aresuited to forming a protective coating that reaches to the bottom of anetched feature. Further, adsorption-based ALD methods are particularlysuited for forming a second sidewall coating that reaches the bottom ofan etched feature because the reactant can be delivered until itsubstantially coats the entire sidewalls of the feature. The reactantdoes not build up near the top of the feature since only a monolayer ofreactant typically adsorbs onto the surface during each cycle.

Returning to FIG. 2, the method continues at operation 207 where thedeposition process is stopped. The method then repeats the operations ofpartially etching a feature in the substrate (operation 211, analogousto operation 201), stopping the etch (operation 213, analogous tooperation 203), depositing protective coating on sidewalls of thepartially etched features (operation 215, analogous to operation 205),and stopping the deposition (operation 217, analogous to operation 207).Next, at operation 219, it is determined whether the feature is fullyetched. If the feature is not fully etched, the method repeats fromoperation 211 with additional etching and deposition of protectivecoatings. The etching operation 211 may alter the second sidewallcoating 310 to form a film that is even more etch resistant than thefilm deposited in operations 205 and 215. In one example, the depositionoperation 205 forms a layer of boron nitride (for example byalternatively cycling BCl₃ and N₂+H₂ and exposing to plasma), and theetching operation 211 reacts the boron nitride film to form boron oxide(e.g., using chemistry having a combination of fluorocarbon(s) andoxygen). Once the feature is fully etched, the method is complete.

In various embodiments, the etching operation 201 and the protectivesidewall coating deposition operation 205 are cyclically repeated anumber of times. For instance, these operations may each occur at leasttwice (as shown in FIG. 2), for example at least about three times, orat least about 5 times. In some cases, the number of cycles (each cycleincluding etching operation 201 and protective sidewall coatingdeposition operation 205, with etching operation 211 and depositionoperation 215 counting as a second cycle) is between about 2-10, forexample between about 2-5. Each time the etching operation occurs, theetch depth increases. The distance etched may be uniform between cycles,or it may be non-uniform. In certain embodiments, the distance etched ineach cycle decreases as additional etches are performed (i.e., laterperformed etching operations may etch less extensively than earlierperformed etching operations). The thickness of the second sidewallcoating 310 deposited in each deposition operation 205 may be uniformbetween cycles, or the thickness of such coatings may vary. Examplethicknesses for the second sidewall coating 310 during each cycle mayrange between about 1-10 nm, for example between about 3-5 nm. Further,the type of coating that is formed may be uniform between the cycles, orit may vary. In one example, a boron nitride sidewall coating is formedduring a first cycle of operation 205, and a boron oxide sidewallcoating is formed during a second cycle of operation 205.

The etching operation 201 and the deposition operation 205 may occur inthe same reaction chamber or in different reaction chambers. In oneexample, the etching operation 201 occurs in a first reaction chamberand the deposition operation 205 occurs in a second reaction chamber,with the first and second reaction chambers together forming amulti-chamber processing apparatus such as a cluster tool. Loadlocks andother appropriate vacuum seals may be provided for transferring thesubstrate between the relevant chambers in certain cases. The substratemay be transferred by a robot arm or other mechanical structure. Areaction chamber used for etching may be a Flex™ reaction chamber, forexample from the 2300® Flex™ product family available from Lam ResearchCorporation of Fremont, Calif. A reaction chamber used for depositionmay be chamber from the Vector® product family or the Altus® productfamily, both available from Lam Research Corporation. The use of acombined reactor for both etching and deposition may be beneficial incertain embodiments as the need to transfer the substrate is avoided.The use of different reactors for etching and deposition may bebeneficial in other embodiments where it is desired that the reactorsare particularly optimized for each operation. The relevant reactionchambers are discussed further below.

As noted, the deposition operation helps optimize the etching operationby forming a deeply penetrating protective layer that minimizes orprevents lateral etch of the feature during the etching operation. Thispromotes formation of etched features having very vertical sidewallswith little or no bowing. In certain implementations, a final etchedfeature having an aspect ratio of at least about 80 has a bow less thanabout 60% (measured as the widest critical dimension-narrowest criticaldimension above that/narrowest critical dimension above that*100). Forexample, a feature having a widest CD of 50 nm and a narrowest CD of 40nm (the 40 nm CD being positioned above the 50 nm CD in the feature) hasa bow of 25% (100*(50 nm-40 nm)/40 nm=25%). In another implementation, afinal etched feature having an aspect ratio of at least about 40 has abow less than about 20%.

IV. Materials and Parameters of the Process Operations A. Substrate

The methods disclosed herein are particularly useful for etchingsemiconductor substrates having dielectric materials thereon. Exampledielectric materials include silicon oxides, silicon nitrides, siliconcarbides, oxynitrides, oxycarbides, carbo-nitrides, doped versions ofthese materials (e.g., doped with boron, phosphorus, etc.), andlaminates from any combinations of these materials. Particular examplematerials include stoichiometric and non-stoichiometric formulations ofSiO₂, SiN, SiON, SiOC, SiCN, etc. As noted above, the dielectricmaterial that is etched may include more than one type/layer ofmaterial. In particular cases, the dielectric material may be providedin alternating layers of SiN and SiO₂ or alternating layers ofpolysilicon and SiO₂. Further details are provided above. The substratemay have an overlying mask layer that defines where the features are tobe etched. In certain cases, the mask layer is Si, and it may have athickness between about 500-1500 nm.

B. Etching Process

In various embodiments, the etching process is a reactive ion etchprocess that involves flowing a chemical etchant into a reaction chamber(often through a showerhead), generating a plasma from, inter alia, theetchant, and exposing a substrate to the plasma. The plasma dissociatesthe etchant compound(s) into neutral species and ion species (e.g.,charged or neutral materials such as CF, CF₂ and CF₃). The plasma is acapacitively coupled plasma in many cases, though other types of plasmamay be used as appropriate. Ions in the plasma are directed toward thewafer and cause the dielectric material to be etched away upon impact.

Example apparatus that may be used to perform the etching processinclude the 2300® FLEX™ product family of reactive ion etch reactorsavailable from Lam Research Corporation of Fremont, Calif. This type ofetch reactor is further described in the following U.S. patents, each ofwhich is herein incorporated by reference in its entirety: U.S. Pat. No.8,552,334, and U.S. Pat. No. 6,841,943.

Various reactant options are available to etch the features into thedielectric material. In certain cases, the etching chemistry includesone or more fluorocarbons. In these or other cases, the etchingchemistry may include other etchants such as NF₃. One or moreco-reactants may also be provided. In some cases oxygen (O₂) is providedas a co-reactant. The oxygen may help moderate formation of a protectivepolymer sidewall coating (e.g., the first sidewall coating 304 of FIGS.3A-3D).

In certain implementations, the etching chemistry includes a combinationof fluorocarbons and oxygen. For instance, in one example the etchingchemistry includes C₄F₆, C₄F₈, N₂, CO, CF₄, and O₂. Other conventionaletching chemistries may also be used, as may non-conventionalchemistries. The fluorocarbons may flow at a rate between about 0-500sccm, for example between about 10-200 sccm. Where C₄F₆ and C₄F₈ areused, the flow of C₄F₆ may range between about 10-200 sccm and the flowof C₄F₈ may range between about 10-200 sccm. The flow of oxygen mayrange between about 0-500 sccm, for example between about 10-200 sccm.The flow of nitrogen may range between about 0-500 sccm, for examplebetween about 10-200 sccm. The flow of tetrafluoromethane may rangebetween about 0-500 sccm, for example between about 10-200 sccm. Theflow of carbon monoxide may range between about 0-500 sccm, for examplebetween about 10-200 sccm. These rates are appropriate in a reactorvolume of approximately 50 liters.

In some embodiments, the substrate temperature during etching is betweenabout 0-100° C. In some embodiments, the pressure during etching isbetween about 10-50 mTorr. The ion energy may be relatively high, forexample between about 1-10 kV. The ion energy is determined by theapplied RF power. In various cases, dual-frequency RF power is used togenerate the plasma. Thus, the RF power may include a first frequencycomponent (e.g., about 2 MHz) and a second frequency component (e.g.,about 60 MHz). Different powers may be provided at each frequencycomponent. For instance, the first frequency component (e.g., about 2MHz) may be provided at a power between about 3-6 kW, for example about5 kW, and the second frequency component (e.g., about 60 MHz) may beprovided at a lower power, for example between about 0.5-2 kW, forexample about 1 kW. These power levels assume that the RF power isdelivered to a single 300 mm wafer. The power levels can be scaledlinearly based on substrate area for additional substrates and/orsubstrates of other sizes (thereby maintaining a uniform power densitydelivered to the substrate).

Each cycle of the etching process etches the dielectric material to somedegree. The distance etched during each cycle may be between about10-500 nm, for example between about 50-200 nm. The total etch depthwill depend on the particular application. For some cases (e.g., DRAM)the total etch depth may be between about 1.5-2 μm. For other cases(e.g., VNAND) the total etch depth may be at least about 3 μm, forexample at least about 4 μm. In these or other cases, the total etchdepth may be about 5 μm or less.

As explained in the discussion of FIGS. 3A-3D, the etching process canproduce a first sidewall coating (e.g., first sidewall coating 304,which may be polymeric). However, the depth of this sidewall coating maylimited to the area near the upper portion of the feature, and may notextend all the way down into the feature where the sidewall protectionis also needed. Thus, a separate deposition operation is performed, asdescribed herein, to form a sidewall coating that covers substantiallythe entire depth of the etched feature.

In some processes, the operation of depositing the protective sidewallcoating (e.g., the second sidewall coating 310 in FIGS. 3C and 3D)results in the deposition of a first type of film, and the etchingoperation alters this first type of film to form a second type of film.The second type of film may be more etch resistant than the first typeof film. For instance, the deposition operation may involve formation ofa boron nitride (BN) film, which is then processed into a boron oxide(BO) film during the etch operation. The inclusion of oxygen in the etchchemistry may at least partially drive this change. The boron oxide filmmay be particularly resistant to etching, thereby providing very goodprotection against over-etching the sidewalls.

C. Deposition Process

The deposition process is performed primarily to deposit a protectivelayer on the sidewalls within the etched features. This protective layershould extend deep into the feature, even in high aspect ratio features.Formation of the protective layer deep within high aspect ratio featuresmay be enabled by reactants that have relatively low stickingcoefficients. Further, reaction mechanisms that rely onadsorption-limited deposition (e.g., ALD reactions) can promoteformation of the protective layer deep within the etched features.Deposition of the protective layer begins after the feature is partiallyetched. As noted in the discussion of FIG. 2, the deposition operationmay be cycled with the etching operation to form additional sidewallprotection as the feature is etched deeper into the dielectric material.In some cases, deposition of the protective layer begins at or after thefeature is etched to at least about ⅓ of its final depth. In someembodiments, deposition of the protective layer begins once the featurereaches an aspect ratio of at least about 2, at least about 5, at leastabout 10, at least about 15, at least about 20, or at least about 30. Inthese or other cases, the deposition may begin before the featurereaches an aspect ratio of about 4, about 10, about 15, about 20, about30, about 40, or about 50. In some embodiments, deposition begins afterthe feature is at least about 1 μm deep, or at least about 1.5 μm deep(e.g., in VNAND embodiments where the final feature depth is 3-4 μm). Inother embodiments, deposition begins after the feature is at least about600 nm deep, or at least about 800 nm deep (e.g., in DRAM embodimentswhere the final feature depth is 1.5-2 μm deep). The optimal time forinitiating deposition of the protective layer is immediately before thesidewalls would otherwise become overetched to form a bow. The exacttiming of this occurrence depends on the shape of the feature beingetched, the material being etched, the chemistry used to etch and todeposit the protective layer, and the process conditions used to etchand deposit the relevant materials.

The protective layer that forms during the deposition process may havevarious compositions. As explained, the protective layer shouldpenetrate deep into an etched feature, and should be relativelyresistant to the etching chemistry used to etch the feature. In somecases the protective layer is a ceramic material or an organic polymer.Example inorganic materials may include, but are not limited to,boron-containing materials such as stoichiometric or non-stoichiometricformulations of boron oxides (B_(x)O_(y)) and boron nitrides(B_(x)N_(y)). Other examples include stoichiometric ornon-stoichiometric formulations of silicon-containing materials such assilicon oxides (Si_(x)O_(y)) and silicon nitrides (Si_(x)N_(y)). Exampleorganic materials may include polyolefins, for example polyfluoroolefinsin some cases. One particular example is a polytetrafluoroethylene. Aprecursor fragment used for forming some polyfluoroolefins is CF₂ (whichmay come from hexafluoropropylene oxide (HFPO) in certain cases), whichhas a very low sticking coefficient and is therefore good at penetratingdeep into an etched feature. Other examples may include stoichiometricand non-stoichiometric formulations of boron carbides or siliconcarbides. In further embodiments, the protective layer that forms duringthe deposition process may be a metal oxide, metal nitride, or metalcarbide.

Where the protective layer includes boron, a boron-containing reactantmay be used. Example boron-containing reactants include, but are notlimited to, triisopropyl borate ([(CH₃)₂CHO]₃B), trimethylboron-d₉(B(CD₃)₃), triphenylborane ((C₆H₅)₃B), and tris(pentafluorophenyl)borane((C₆F₅)₃B). Other examples of boron-containing reactants include borontrichloride (BCl₃), borane (BH₃), diborane (B₂H₆), boron trifluoride(BF₃), and trimethyl borate (B(OCH₃)₃). In a particular example, aboron-containing reactant is selected from the group consisting of:B₂H₆, BCl₃, BF₃, and combinations thereof. Cyclic ALD or ALD-likedeposition reactions may deposit the boron-containing protective layer.Alternatively, non-cyclic processes such as bulk CVD deposition maydeposit the boron-containing protective layer.

Where the protective layer includes silicon, a silicon-containingreactant may be used. A silicon-containing reactant may be, for example,a silane, a halosilane or an aminosilane. A silane contains hydrogenand/or carbon groups, but does not contain a halogen. Examples ofsilanes are silane (SiH₄), disilane (Si₂H₆), and organo silanes such asmethylsilane, ethylsilane, isopropylsilane, t-butylsilane,dimethylsilane, diethyl silane, di-t-butylsilane, allylsilane,sec-butylsilane, thexylsilane, isoamylsilane, t-butyldisilane,di-t-butyldisilane, and the like. A halosilane contains at least onehalogen group and may or may not contain hydrogens and/or carbon groups.Examples of halosilanes are iodosilanes, bromosilanes, chlorosilanes andfluorosilanes. Although halosilanes, particularly fluorosilanes, mayform reactive halide species that can etch silicon materials, in certainembodiments described herein, the silicon-containing reactant is notpresent when a plasma is struck. Specific chlorosilanes aretetrachlorosilane (SiCl₄), trichlorosilane (HSiCl₃), dichlorosilane(H₂SiCl₂), monochlorosilane (ClSiH₃), chloroallylsilane,chloromethylsilane, dichloromethylsilane, chlorodimethylsilane,chloroethylsilane, t-butylchlorosilane, di-t-butylchlorosilane,chloroisopropylsilane, chloro-sec-butylsilane,t-butyldimethylchlorosilane, thexyldimethylchlorosilane, and the like.One specific bromosilane is SiBr₄. An aminosilane includes at least onenitrogen atom bonded to a silicon atom, but may also contain hydrogens,oxygens, halogens and carbons. Examples of aminosilanes are mono-, di-,tri- and tetra-aminosilane (H₃Si(NH₂)₄, H₂Si(NH₂)₂, HSi(NH₂)₃ andSi(NH₂)₄, respectively), as well as substituted mono-, di-, tri- andtetra-aminosilanes, for example, t-butylaminosilane, methylaminosilane,tert-butylsilanamine, bis(tertiarybutylamino)silane (SiH₂(NHC(CH₃)₃)₂(BTBAS), tert-butyl silylcarbamate, SiH(CH₃)—(N(CH₃)₂)₂,SiHCl—(N(CH₃)₂)₂, (Si(CH₃)₂NH)₃ and the like. A further example of anaminosilane is trisilylamine (N(SiH₃)₃). In a particular example, asilicon-containing reactant is selected from the group consisting ofSiCl₄, SiH₄, SiF₄, SiBr₄, and combinations thereof. Cyclic ALD orALD-like deposition reactions may deposit the silicon-containingprotective layer. Alternatively, non-cyclic processes such as bulk CVDdeposition may deposit the silicon-containing protective layer. Incertain embodiments, the silicon containing precursor is reacted with anoxidant such nitrous oxide and/or molecular oxygen to produce a siliconoxide protective coating.

Where the protective film includes nitrogen—e.g., a silicon nitride, asilicon oxynitride, or a boron nitride—a nitrogen-containing reactantmay be used. A nitrogen-containing reactant contains at least onenitrogen, for example, nitrogen, ammonia, hydrazine, amines (e.g.,amines bearing carbon) such as methylamine, dimethylamine, ethylamine,isopropylamine, t-butylamine, di-t-butylamine, cyclopropylamine,sec-butylamine, cyclobutylamine, isoamylamine, 2-methylbutan-2-amine,trimethylamine, diisopropylamine, diethylisopropylamine,di-t-butylhydrazine, as well as aromatic containing amines such asanilines, pyridines, and benzylamines. Amines may be primary, secondary,tertiary or quaternary (for example, tetraalkylammonium compounds). Anitrogen-containing reactant can contain heteroatoms other thannitrogen, for example, hydroxylamine, t-butyloxycarbonyl amine andN-t-butyl hydroxylamine are nitrogen-containing reactants. Anotherexample is nitrous oxide.

Where the protective film includes oxygen—e.g., a silicon oxide, a boronoxide, or a metal oxide—an oxygen-containing reactant may be used.Examples of oxygen-containing reactants include, but are not limited to,oxygen, ozone, nitrous oxide, nitric oxide, nitrogen dioxide, carbonmonoxide, carbon dioxide, sulfur oxide, sulfur dioxide,oxygen-containing hydrocarbons (C_(x)H_(y)O_(z)), water, mixturesthereof, etc. The disclosed precursors are not intended to be limiting.

When the protective coating contains an organic polymer, a low stickingcoefficient precursor is used. Examples of such precursors include thosethat produce CF₂ fragments.

Other reactants may also be used as known by those of ordinary skill inthe art. For example where the protective film includes a metal, ametal-containing reactant may be used, and where the protective filmincludes carbon, a carbon-containing reactant may be used.

A few particular examples of reactant combinations will be provided,though these examples are not intended to be limiting. In one example, aboron-containing precursor film is formed by adsorbing aboron-containing reactant such as B₂H₆, BCl₃ or BF₃ to the substratesurface. The precursor film is converted to a protective film throughexposure to an oxidizing or nitridizing plasma (e.g., the plasma beinggenerated from O₂, N₂, NH₃, N₂O, H₂, and combinations thereof).

In a particular example, BCl₃ is adsorbed to form the boron-containingprecursor layer, and then a plasma is generated from a combination of N₂and H₂, which drives formation of a boron nitride protective film. Thereaction may occur through a cyclic process such as ALD. In a similarexample, the reaction may occur through a continuous process such asCVD, where the BCl₃, N₂ and H₂ are all provided concurrently while thesubstrate is exposed to plasma. After formation of the boron nitridefilm, the substrate may be further etched. The etching chemistry mayinclude oxygen (along with other etching chemistry, e.g., fluorocarbonssuch as C₄F₆ and/or C₄F₈), which can react with the boron nitride filmto form boron oxide. The boron oxide is particularly resistant to thefluorocarbon-based etch chemistry, thereby providing good protectionagainst over-etching the sidewalls.

In another example, a silicon containing species (e.g., SiCl4, SiH4,SiF4, SiBr4, etc.) is adsorbed onto the surface of the substrate to forma silicon-containing precursor film. The silicon-containing precursorfilm may be converted to silicon oxide or silicon nitride by exposing itto a plasma generated from O₂, N₂, NH₃, N₂O, H₂, and combinationsthereof. If the dielectric material being etched includes silicon oxide,it may be preferable to form the protective layer as a silicon nitride(and vice versa).

As noted above, the precursor(s) used to form the protective layer mayhave relatively low sticking coefficients, thereby enabling theprecursors to penetrate deep into the etched features. In some cases,the sticking coefficient of the precursors (at the relevant depositionconditions) may be about 0.05 or less, for example about 0.001 or less.

The reaction mechanism may be cyclic (e.g., ALD) or continuous (e.g.,CVD). Any method that results in the formation of the protectivesidewall film at high aspect ratios may be used. As mentioned, ALDreactions may be particularly well suited for this purpose due to theirconformality and adsorption-limited properties. However, other typesreactions may be used so long as the film is able to form at high aspectratios to protect the sidewalls deep in an etched feature. The basicoperations for ALD and CVD reactions are described above in relation tooperation 205 of FIG. 2. Briefly, plasma assisted ALD reactions involvecyclically performing the following operations: (a) delivery of a firstreactant to form an adsorbed precursor layer, (b) an optional purgeoperation to remove the first reactant from the reaction chamber, (c)delivery of a second reactant, often provided in the form of a plasma,(d) optional purge to remove excess reactant, and (e) repeating (a)-(d)until the film reaches a desired thickness. Because the reactants areprovided at separate times and the reaction is a surface reaction, thefilm is adsorption limited. This results in the formation of veryconformal films that can line entire recessed features. By contrast,plasma assisted CVD reactions involve delivering reactant(s) to thesubstrate continuously while the substrate is exposed to plasma. CVDreactions are gas phase reactions, which deposit reaction products onthe substrate surface.

The following reaction conditions may be used in certain embodimentswhere the deposition reaction occurs through ALD methods. The substratetemperature may be maintained between about 0-500° C., for examplebetween about 20-200° C. The pressure may be maintained as low as about100 or 200 mTorr and as high as about 1, 2, or 3 Torr. The ion energymay be relatively low, for example below about 1 kV. The RF frequencyused to generate the plasma may be about 60 MHz, though otherfrequencies may also be used. The RF power may be a few hundred Watts,for example about 500 W or less, about 400 W or less, or about 300 W orless (assuming the power is delivered to a single 300 mm wafer, thepower scaling linearly based on substrate area for additional ordifferently sized substrates). During each ALD cycle, the adsorbingreactant may be delivered for a duration between about 0.5-20 seconds,at a flow rate between about 50-1000 sccm. The first purge may have aduration between about 0-60 seconds. The plasma may be exposed to thesubstrate for a duration between about 0.5-120 seconds, with a flow rateof a reactant (excluding any inert gas provided along with the reactant)between about 50-1000 sccm. A flow rate of hydrogen during the plasmaexposure may be between about 0-1000 sccm. The post-RF purge may have aduration between about 0-60 seconds.

The following reaction conditions may be used in certain embodimentswhere the deposition reaction occurs through CVD methods. The substratetemperature may be maintained between about 0-500° C., for examplebetween about 20-200° C. The pressure may be maintained between about100-3000 mT. The RF frequency used to generate the plasma may be 2-60MHz. The RF power used to generate the plasma may be between about50-2000 W, for example between about 100-800 W (assuming a single 300 mmsubstrate). The duration of the reactant delivery and plasma exposuremay be between about 1-180 seconds. The flow rates depend on theparticular reactants. In one example, BCl₃, N₂ and H₂ are provided, withBCl₃ provided at a flow rate between about 50-1000 sccm, N₂ at a ratebetween about 50-1000 sccm, and H₂ at a rate between about 50-1000 sccm.The ALD and CVD reaction conditions are provided as guidance and are notintended to be limiting.

V. Apparatus

The methods described herein may be performed by any suitable apparatusor combination of apparatus. A suitable apparatus includes hardware foraccomplishing the process operations and a system controller havinginstructions for controlling process operations in accordance with thepresent invention. For example, in some embodiments, the hardware mayinclude one or more process stations included in a process tool. Oneprocess station may be an etching station and another process stationmay be a deposition station. In another embodiment, etching anddeposition occur in a single station/chamber.

FIGS. 4A-4C illustrate an embodiment of an adjustable gap capacitivelycoupled confined RF plasma reactor 400 that may be used for performingthe etching operations described herein. As depicted, a vacuum chamber402 includes a chamber housing 404, surrounding an interior spacehousing a lower electrode 406. In an upper portion of the chamber 402 anupper electrode 408 is vertically spaced apart from the lower electrode406. Planar surfaces of the upper and lower electrodes 408, 406 aresubstantially parallel and orthoganol to the vertical direction betweenthe electrodes. Preferably the upper and lower electrodes 408, 406 arecircular and coaxial with respect to a vertical axis. A lower surface ofthe upper electrode 408 faces an upper surface of the lower electrode406. The spaced apart facing electrode surfaces define an adjustable gap410 therebetween. During operation, the lower electrode 406 is suppliedRF power by an RF power supply (match) 420. RF power is supplied to thelower electrode 406 though an RF supply conduit 422, an RF strap 424 andan RF power member 426. A grounding shield 436 may surround the RF powermember 426 to provide a more uniform RF field to the lower electrode406. As described in commonly-owned U.S. Pat. No. 7,732,728, the entirecontents of which are herein incorporated by reference, a wafer isinserted through wafer port 482 and supported in the gap 410 on thelower electrode 406 for processing, a process gas is supplied to the gap410 and excited into plasma state by the RF power. The upper electrode408 can be powered or grounded.

In the embodiment shown in FIGS. 4A-4C, the lower electrode 406 issupported on a lower electrode support plate 416. An insulator ring 414interposed between the lower electrode 406 and the lower electrodeSupport plate 416 insulates the lower electrode 406 from the supportplate 416.

An RF bias housing 430 supports the lower electrode 406 on an RF biashousing bowl 432. The bowl 432 is connected through an opening in achamber wall plate 418 to a conduit support plate 438 by an arm 434 ofthe RF bias housing 430. In a preferred embodiment, the RF bias housingbowl 432 and RF bias housing arm 434 are integrally formed as onecomponent, however, the arm 434 and bowl 432 can also be two separatecomponents bolted or joined together.

The RF bias housing arm 434 includes one or more hollow passages forpassing RF power and facilities, such as gas coolant, liquid coolant, RFenergy, cables for lift pin control, electrical monitoring and actuatingsignals from outside the vacuum chamber 402 to inside the vacuum chamber402 at a space on the backside of the lower electrode 406. The RF supplyconduit 422 is insulated from the RF bias housing arm 434, the RF biashousing arm 434 providing a return path for RF power to the RF powersupply 420. A facilities conduit 440 provides a passageway for facilitycomponents. Further details of the facility components are described inU.S. Pat. Nos. 5,948,704 and 7,732,728 and are not shown here forsimplicity of description. The gap 410 is preferably surrounded by aconfinement ring assembly or shroud (not shown), details of which can befound in commonly owned published U.S. Pat. No. 7,740,736 hereinincorporated by reference. The interior of the vacuum chamber 402 ismaintained at a low pressure by connection to a vacuum pump throughvacuum portal 480.

The conduit support plate 438 is attached to an actuation mechanism 442.Details of an actuation mechanism are described in commonly-owned U.S.Pat. No. 7,732,728 incorporated herein by above. The actuation mechanism442, such as a servo mechanical motor, stepper motor or the like isattached to a vertical linear bearing 444, for example, by a screw gear446 such as a ball screw and motor for rotating the ball screw. Duringoperation to adjust the size of the gap 410, the actuation mechanism 442travels along the vertical linear bearing 444. FIG. 4A illustrates thearrangement when the actuation mechanism 442 is at a high position onthe linear bearing 444 resulting in a small gap 410 a. FIG. 4Billustrates the arrangement when the actuation mechanism 442 is at a midposition on the linear bearing 444. As shown, the lower electrode 406,the RF bias housing 430, the conduit support plate 438, the RF powersupply 420 have all moved lower with respect to the chamber housing 404and the upper electrode 408, resulting in a medium size gap 410 b.

FIG. 4C illustrates a large gap 410 c when the actuation mechanism 442is at a low position on the linear bearing. Preferably, the upper andlower electrodes 408, 406 remain co-axial during the gap adjustment andthe facing surfaces of the upper and lower electrodes across the gapremain parallel.

This embodiment allows the gap 410 between the lower and upperelectrodes 406, 408 in the CCP chamber 402 during multi-step processrecipes (BARC, HARC, and STRIP etc.) to be adjusted, for example, inorder to maintain uniform etch across a large diameter substrate such as300 mm wafers or flat panel displays. In particular, this chamberpertains to a mechanical arrangement that permits the linear motionnecessary to provide the adjustable gap between lower and upperelectrodes 406, 408.

FIG. 4A illustrates laterally deflected bellows 450 sealed at aproximate end to the conduit support plate 438 and at a distal end to astepped flange 428 of chamber wall plate 418. The inner diameter of thestepped flange defines an opening 412 in the chamber wall plate 418through which the RF bias housing arm 434 passes. The distal end of thebellows 450 is clamped by a clamp ring 452.

The laterally deflected bellows 450 provides a vacuum seal whileallowing vertical movement of the RF bias housing 430, conduit supportplate 438 and actuation mechanism 442. The RF bias housing 430, conduitsupport plate 438 and actuation mechanism 442 can be referred to as acantilever assembly. Preferably, the RF power supply 420 moves with thecantilever assembly and can be attached to the conduit support plate438. FIG. 4B shows the bellows 450 in a neutral position when thecantilever assembly is at a mid position. FIG. 4C shows the bellows 450laterally deflected when the cantilever assembly is at a low position.

A labyrinth seal 448 provides a particle barrier between the bellows 450and the interior of the plasma processing chamber housing 404. A fixedshield 456 is immovably attached to the inside inner wall of the chamberhousing 404 at the chamber wall plate 418 so as to provide a labyrinthgroove 460 (slot) in which a movable shield plate 458 moves verticallyto accommodate vertical movement of the cantilever assembly. The outerportion of the movable shield plate 458 remains in the slot at allvertical positions of the lower electrode 406.

In the embodiment shown, the labyrinth seal 448 includes a fixed shield456 attached to an inner surface of the chamber wall plate 418 at aperiphery of the opening 412 in the chamber wall plate 418 defining alabyrinth groove 460. The movable shield plate 458 is attached andextends radially from the RF bias housing arm 434 where the arm 434passes through the opening 412 in the chamber wall plate 418. Themovable shield plate 458 extends into the labyrinth groove 460 whilespaced apart from the fixed shield 456 by a first gap and spaced apartfrom the interior surface of the chamber wall plate 418 by a second gapallowing the cantilevered assembly to move vertically. The labyrinthseal 448 blocks migration of particles spalled from the bellows 450 fromentering the vacuum chamber interior 405 and blocks radicals fromprocess gas plasma from migrating to the bellows 450 where the radicalscan form deposits which are subsequently spalled.

FIG. 4A shows the movable shield plate 458 at a higher position in thelabyrinth groove 460 above the RF bias housing arm 434 when thecantilevered assembly is in a high position (small gap 410 a). FIG. 4Cshows the movable shield plate 458 at a lower position in the labyrinthgroove 460 above the RF bias housing arm 434 when the cantileveredassembly is in a low position (large gap 410 c). FIG. 4B shows themovable shield plate 458 in a neutral or mid position within thelabyrinth groove 460 when the cantilevered assembly is in a mid position(medium gap 410 b). While the labyrinth seal 448 is shown as symmetricalabout the RF bias housing arm 434, in other embodiments the labyrinthseal 448 may be asymmetrical about the RF bias arm 434.

FIG. 5 provides a simple block diagram depicting various reactorcomponents arranged for implementing deposition methods describedherein. As shown, a reactor 500 includes a process chamber 524 thatencloses other components of the reactor and serves to contain a plasmagenerated by a capacitive-discharge type system including a showerhead514 working in conjunction with a grounded heater block 520. A highfrequency (HF) radio frequency (RF) generator 504 and a low frequency(LF) RF generator 502 may be connected to a matching network 506 and tothe showerhead 514. The power and frequency supplied by matching network506 may be sufficient to generate a plasma from process gases suppliedto the process chamber 524. For example, the matching network 506 mayprovide 50 W to 500 W of HFRF power. In some examples, the matchingnetwork 506 may provide 100 W to 5000 W of HFRF power and 100 W to 5000W of LFRF power total energy. In a typical process, the HFRF componentmay generally be between 5 MHz to 60 MHz, e.g., 13.56 MHz. In operationswhere there is an LF component, the LF component may be from about 100kHz to 2 MHz, e.g., 430 kHz.

Within the reactor, a wafer pedestal 518 may support a substrate 516.The wafer pedestal 518 may include a chuck, a fork, or lift pins (notshown) to hold and transfer the substrate during and between thedeposition and/or plasma treatment reactions. The chuck may be anelectrostatic chuck, a mechanical chuck, or various other types of chuckas are available for use in the industry and/or for research.

Various process gases may be introduced via inlet 512. Multiple sourcegas lines 510 are connected to manifold 508. The gases may be premixedor not. Appropriate valving and mass flow control mechanisms may beemployed to ensure that the correct process gases are delivered duringthe deposition and plasma treatment phases of the process. In the casewhere a chemical precursor(s) is delivered in liquid form, liquid flowcontrol mechanisms may be employed. Such liquids may then be vaporizedand mixed with process gases during transportation in a manifold heatedabove the vaporization point of the chemical precursor supplied inliquid form before reaching the deposition chamber.

Process gases may exit chamber 524 via an outlet 522. A vacuum pump,e.g., a one or two stage mechanical dry pump and/or turbomolecular pump540, may be used to draw process gases out of the process chamber 524and to maintain a suitably low pressure within the process chamber 524by using a closed-loop-controlled flow restriction device, such as athrottle valve or a pendulum valve.

As discussed above, the techniques for deposition discussed herein maybe implemented on a multi-station or single station tool. In specificimplementations, a 300 mm Lam Vector™ tool having a 4-station depositionscheme or a 200 mm Sequel tool having a 6-station deposition scheme maybe used. In some implementations, tools for processing 450 mm wafers maybe used. In various implementations, the wafers may be indexed afterevery deposition and/or post-deposition plasma treatment, or may beindexed after etching operations if the etching chambers or stations arealso part of the same tool, or multiple depositions and treatments maybe conducted at a single station before indexing the wafer.

In some embodiments, an apparatus may be provided that is configured toperform the techniques described herein. A suitable apparatus mayinclude hardware for performing various process operations as well as asystem controller 530 having instructions for controlling processoperations in accordance with the disclosed embodiments. The systemcontroller 530 will typically include one or more memory devices and oneor more processors communicatively connected with various processcontrol equipment, e.g., valves, RF generators, wafer handling systems,etc., and configured to execute the instructions so that the apparatuswill perform a technique in accordance with the disclosed embodiments.Machine-readable media containing instructions for controlling processoperations in accordance with the present disclosure may be coupled tothe system controller 530. The controller 530 may be communicativelyconnected with various hardware devices, e.g., mass flow controllers,valves, RF generators, vacuum pumps, etc. to facilitate control of thevarious process parameters that are associated with the depositionoperations as described herein.

In some embodiments, a system controller 530 may control all of theactivities of the reactor 500. The system controller 530 may executesystem control software stored in a mass storage device, loaded into amemory device, and executed on a processor. The system control softwaremay include instructions for controlling the timing of gas flows, wafermovement, RF generator activation, etc., as well as instructions forcontrolling the mixture of gases, the chamber and/or station pressure,the chamber and/or station temperature, the wafer temperature, thetarget power levels, the RF power levels, the substrate pedestal, chuck,and/or susceptor position, and other parameters of a particular processperformed by the reactor apparatus 500. The system control software maybe configured in any suitable way. For example, various process toolcomponent subroutines or control objects may be written to controloperation of the process tool components necessary to carry out variousprocess tool processes. The system control software may be coded in anysuitable computer readable programming language.

The system controller 530 may typically include one or more memorydevices and one or more processors configured to execute theinstructions so that the apparatus will perform a technique inaccordance with the present disclosure. Machine-readable mediacontaining instructions for controlling process operations in accordancewith disclosed embodiments may be coupled to the system controller 530.

One or more process stations may be included in a multi-stationprocessing tool. FIG. 6 shows a schematic view of an embodiment of amulti-station processing tool 600 with an inbound load lock 602 and anoutbound load lock 604, either or both of which may include a remoteplasma source. A robot 606, at atmospheric pressure, is configured tomove wafers from a cassette loaded through a pod 608 into inbound loadlock 602 via an atmospheric port 610. A wafer is placed by the robot 606on a pedestal 612 in the inbound load lock 602, the atmospheric port 610is closed, and the load lock is pumped down. Where the inbound load lock602 includes a remote plasma source, the wafer may be exposed to aremote plasma treatment in the load lock prior to being introduced intoa processing chamber 614. Further, the wafer also may be heated in theinbound load lock 602 as well, for example, to remove moisture andadsorbed gases. Next, a chamber transport port 616 to processing chamber614 is opened, and another robot (not shown) places the wafer into thereactor on a pedestal of a first station shown in the reactor forprocessing. While the embodiment depicted includes load locks, it willbe appreciated that, in some embodiments, direct entry of a wafer into aprocess station may be provided.

The depicted processing chamber 614 includes four process stations,numbered from 1 to 4 in the embodiment shown in FIG. 6. Each station hasa heated pedestal (shown at 618 for station 1), and gas line inlets. Itwill be appreciated that in some embodiments, each process station mayhave different or multiple purposes. For example, each of the processstations 1-4 may be a chamber for performing one or more of ALD, CVD,CFD, or etching (any of which may be plasma assisted). In oneembodiment, at least one of the process stations is a deposition stationhaving a reaction chamber as shown in FIG. 5, and at least one of theother process stations is an etching station having a reaction chamberas shown in FIGS. 4A-4C. While the depicted processing chamber 614includes four stations, it will be understood that a processing chamberaccording to the present disclosure may have any suitable number ofstations. For example, in some embodiments, a processing chamber mayhave five or more stations, while in other embodiments a processingchamber may have three or fewer stations.

FIG. 6 also depicts an embodiment of a wafer handling system 609 fortransferring wafers within processing chamber 614. In some embodiments,wafer handling system 609 may transfer wafers between various processstations and/or between a process station and a load lock. It will beappreciated that any suitable wafer handling system may be employed.Non-limiting examples include wafer carousels and wafer handling robots.FIG. 6 also depicts an embodiment of a system controller 650 employed tocontrol process conditions and hardware states of process tool 600.System controller 650 may include one or more memory devices 656, one ormore mass storage devices 654, and one or more processors 652. Processor652 may include a CPU or computer, analog and/or digital input/outputconnections, stepper motor controller boards, etc.

In some implementations, a controller is part of a system, which may bepart of the above-described examples. Such systems can comprisesemiconductor processing equipment, including a processing tool ortools, chamber or chambers, a platform or platforms for processing,and/or specific processing components (a wafer pedestal, a gas flowsystem, etc.). These systems may be integrated with electronics forcontrolling their operation before, during, and after processing of asemiconductor wafer or substrate. The electronics may be referred to asthe “controller,” which may control various components or subparts ofthe system or systems. The controller, depending on the processingrequirements and/or the type of system, may be programmed to control anyof the processes disclosed herein, including the delivery of processinggases, temperature settings (e.g., heating and/or cooling), pressuresettings, vacuum settings, power settings, radio frequency (RF)generator settings, RF matching circuit settings, frequency settings,flow rate settings, fluid delivery settings, positional and operationsettings, wafer transfers into and out of a tool and other transfertools and/or load locks connected to or interfaced with a specificsystem.

Broadly speaking, the controller may be defined as electronics havingvarious integrated circuits, logic, memory, and/or software that receiveinstructions, issue instructions, control operation, enable cleaningoperations, enable endpoint measurements, and the like. The integratedcircuits may include chips in the form of firmware that store programinstructions, digital signal processors (DSPs), chips defined asapplication specific integrated circuits (ASICs), and/or one or moremicroprocessors, or microcontrollers that execute program instructions(e.g., software). Program instructions may be instructions communicatedto the controller in the form of various individual settings (or programfiles), defining operational parameters for carrying out a particularprocess on or for a semiconductor wafer or to a system. The operationalparameters may, in some embodiments, be part of a recipe defined byprocess engineers to accomplish one or more processing operations duringthe fabrication of one or more layers, materials, metals, oxides,silicon, silicon dioxide, surfaces, circuits, and/or dies of a wafer.

The controller, in some implementations, may be a part of or coupled toa computer that is integrated with, coupled to the system, otherwisenetworked to the system, or a combination thereof. For example, thecontroller may be in the “cloud” or all or a part of a fab host computersystem, which can allow for remote access of the wafer processing. Thecomputer may enable remote access to the system to monitor currentprogress of fabrication operations, examine a history of pastfabrication operations, examine trends or performance metrics from aplurality of fabrication operations, to change parameters of currentprocessing, to set processing operations to follow a current processing,or to start a new process. In some examples, a remote computer (e.g. aserver) can provide process recipes to a system over a network, whichmay include a local network or the Internet. The remote computer mayinclude a user interface that enables entry or programming of parametersand/or settings, which are then communicated to the system from theremote computer. In some examples, the controller receives instructionsin the form of data, which specify parameters for each of the processingoperations to be performed during one or more operations. It should beunderstood that the parameters may be specific to the type of process tobe performed and the type of tool that the controller is configured tointerface with or control. Thus as described above, the controller maybe distributed, such as by comprising one or more discrete controllersthat are networked together and working towards a common purpose, suchas the processes and controls described herein. An example of adistributed controller for such purposes would be one or more integratedcircuits on a chamber in communication with one or more integratedcircuits located remotely (such as at the platform level or as part of aremote computer) that combine to control a process on the chamber.

Without limitation, example systems may include a plasma etch chamber ormodule, a deposition chamber or module, a spin-rinse chamber or module,a metal plating chamber or module, a clean chamber or module, a beveledge etch chamber or module, a physical vapor deposition (PVD) chamberor module, a chemical vapor deposition (CVD) chamber or module, anatomic layer deposition (ALD) chamber or module, an atomic layer etch(ALE) chamber or module, an ion implantation chamber or module, a trackchamber or module, and any other semiconductor processing systems thatmay be associated or used in the fabrication and/or manufacturing ofsemiconductor wafers.

As noted above, depending on the process operation or operations to beperformed by the tool, the controller might communicate with one or moreof other tool circuits or modules, other tool components, cluster tools,other tool interfaces, adjacent tools, neighboring tools, tools locatedthroughout a factory, a main computer, another controller, or tools usedin material transport that bring containers of wafers to and from toollocations and/or load ports in a semiconductor manufacturing factory.

In certain embodiments, the controller has instructions to perform theoperations shown and described in relation to FIG. 2. For example, thecontroller may have instructions to cyclically (a) perform an etchingoperation to partially etch a feature on a substrate, and (b) deposit aprotective sidewall coating in the etched feature without substantiallyetching the substrate. The instructions may relate to performing theseprocesses using the disclosed reaction conditions. The instructions mayalso relate to transferring the substrate between etching and depositionchambers in some implementations.

Returning to the embodiment of FIG. 6, in some embodiments, systemcontroller 650 controls all of the activities of process tool 600.System controller 650 executes system control software 658 stored inmass storage device 654, loaded into memory device 656, and executed onprocessor 652. Alternatively, the control logic may be hard coded in thecontroller 650. Applications Specific Integrated Circuits, ProgrammableLogic Devices (e.g., field-programmable gate arrays, or FPGAs) and thelike may be used for these purposes. In the following discussion,wherever “software” or “code” is used, functionally comparable hardcoded logic may be used in its place. System control software 658 mayinclude instructions for controlling the timing, mixture of gases,chamber and/or station pressure, chamber and/or station temperature,wafer temperature, target power levels, RF power levels, RF exposuretime, substrate pedestal, chuck and/or susceptor position, and otherparameters of a particular process performed by process tool 600. Systemcontrol software 658 may be configured in any suitable way. For example,various process tool component subroutines or control objects may bewritten to control operation of the process tool components necessary tocarry out various process tool processes. System control software 658may be coded in any suitable computer readable programming language.

In some embodiments, system control software 658 may includeinput/output control (IOC) sequencing instructions for controlling thevarious parameters described above. For example, each phase of a CFDprocess may include one or more instructions for execution by systemcontroller 650. The instructions for setting process conditions for anALD process phase may be included in a corresponding ALD recipe phase.In some embodiments, the ALD recipe phases may be sequentially arranged,so that all instructions for an ALD process phase are executedconcurrently with that process phase.

Other computer software and/or programs stored on mass storage device654 and/or memory device 656 associated with system controller 650 maybe employed in some embodiments. Examples of programs or sections ofprograms for this purpose include a substrate positioning program, aprocess gas control program, a pressure control program, a heatercontrol program, and a plasma control program.

A substrate positioning program may include program code for processtool components that are used to load the substrate onto pedestal 618and to control the spacing between the substrate and other parts ofprocess tool 600.

A process gas control program may include code for controlling gascomposition and flow rates and optionally for flowing gas into one ormore process stations prior to deposition in order to stabilize thepressure in the process station. In some embodiments, the controllerincludes instructions for depositing a nanolaminate protective layer ona core layer, and depositing a conformal layer over the protectivelayer.

A pressure control program may include code for controlling the pressurein the process station by regulating, for example, a throttle valve inthe exhaust system of the process station, a gas flow into the processstation, etc. In some embodiments, the controller includes instructionsfor depositing a nanolaminate protective layer on a core layer, anddepositing a conformal layer over the protective layer.

A heater control program may include code for controlling the current toa heating unit that is used to heat the substrate. Alternatively, theheater control program may control delivery of a heat transfer gas (suchas helium) to the substrate. In certain implementations, the controllerincludes instructions for depositing a nanolaminate protective layer ata first temperature, and a conformal layer over the protective layer ata second temperature, where the second temperature is higher than thefirst temperature.

A plasma control program may include code for setting RF power levelsand exposure times in one or more process stations in accordance withthe embodiments herein. In some embodiments, the controller includesinstructions for depositing a nanolaminate protective layer at a firstRF power level and RF duration, and depositing a conformal layer overthe protective layer at a second RF power level and RF duration. Thesecond RF power level and/or the second RF duration may be higher/longerthan the first RF power level/duration.

In some embodiments, there may be a user interface associated withsystem controller 650. The user interface may include a display screen,graphical software displays of the apparatus and/or process conditions,and user input devices such as pointing devices, keyboards, touchscreens, microphones, etc.

In some embodiments, parameters adjusted by system controller 650 mayrelate to process conditions. Non-limiting examples include process gascomposition and flow rates, temperature, pressure, plasma conditions(such as RF bias power levels and exposure times), etc. These parametersmay be provided to the user in the form of a recipe, which may beentered utilizing the user interface.

Signals for monitoring the process may be provided by analog and/ordigital input connections of system controller 650 from various processtool sensors. The signals for controlling the process may be output onthe analog and digital output connections of process tool 600.Non-limiting examples of process tool sensors that may be monitoredinclude mass flow controllers, pressure sensors (such as manometers),thermocouples, etc. Appropriately programmed feedback and controlalgorithms may be used with data from these sensors to maintain processconditions.

System controller 650 may provide program instructions for implementingthe above-described deposition processes. The program instructions maycontrol a variety of process parameters, such as DC power level, RF biaspower level, pressure, temperature, etc. The instructions may controlthe parameters to operate in-situ deposition of film stacks according tovarious embodiments described herein.

The system controller will typically include one or more memory devicesand one or more processors configured to execute the instructions sothat the apparatus will perform a method in accordance with thedisclosed embodiments. Machine-readable, non-transitory media containinginstructions for controlling process operations in accordance with thedisclosed embodiments may be coupled to the system controller.

The various hardware and method embodiments described above may be usedin conjunction with lithographic patterning tools or processes, forexample, for the fabrication or manufacture of semiconductor devices,displays, LEDs, photovoltaic panels and the like. Typically, though notnecessarily, such tools/processes will be used or conducted together ina common fabrication facility.

FIG. 7 depicts a semiconductor process cluster architecture with variousmodules that interface with a vacuum transfer module 738 (VTM). Thearrangement of transfer modules to “transfer” substrates among multiplestorage facilities and processing modules may be referred to as a“cluster tool architecture” system. Airlock 730, also known as aloadlock or transfer module, is shown in VTM 738 with four processingmodules 720 a-720 d, which may be individual optimized to performvarious fabrication processes. By way of example, processing modules 720a-720 d may be implemented to perform substrate etching, deposition, ionimplantation, substrate cleaning, sputtering, and/or other semiconductorprocesses as well as laser metrology and other defect detection anddefect identification methods. One or more of the processing modules(any of 720 a-720 d) may be implemented as disclosed herein, i.e., foretching recessed features into substrates, depositing protective filmson sidewalls of recessed features, and other suitable functions inaccordance with the disclosed embodiments. Airlock 730 and processmodules 720 a-720 d may be referred to as “stations.” Each station has afacet 736 that interfaces the station to VTM 738. Inside the facets,sensors 1-18 are used to detect the passing of substrate 726 when movedbetween respective stations.

Robot 722 transfers substrates between stations. In one implementation,the robot may have one arm, and in another implementation, the robot mayhave two arms, where each arm has an end effector 724 to pick substratesfor transport. Front-end robot 732, in atmospheric transfer module (ATM)740, may be used to transfer substrates from cassette or Front OpeningUnified Pod (FOUP) 734 in Load Port Module (LPM) 742 to airlock 730.Module center 728 inside process modules 720 a-720 d may be one locationfor placing the substrate. Aligner 744 in ATM 740 may be used to alignsubstrates.

In an exemplary processing method, a substrate is placed in one of theFOUPs 734 in the LPM 742. Front-end robot 732 transfers the substratefrom the FOUP 734 to the aligner 744, which allows the substrate 726 tobe properly centered before it is etched, or deposited upon, orotherwise processed. After being aligned, the substrate is moved by thefront-end robot 732 into an airlock 730. Because airlock modules havethe ability to match the environment between an ATM and a VTM, thesubstrate is able to move between the two pressure environments withoutbeing damaged. From the airlock module 730, the substrate is moved byrobot 722 through VTM 738 and into one of the process modules 720 a-720d, for example process module 720 a. In order to achieve this substratemovement, the robot 722 uses end effectors 724 on each of its arms. Inprocess module 720 a, the substrate undergoes etching as describedherein to form a partially etched feature. Next, the robot 722 moves thesubstrate out of processing module 720 a, into the VTM 738, and theninto a different processing module 720 b. In processing module 720 b, aprotective film is deposited on sidewalls of the partially etchedfeature. Then, the robot 722 moves the substrate out of processingmodule 720 b, into the VTM 738, and into processing module 720 a, wherethe partially etched feature is further etched. The etching/depositioncan be repeated until the feature is fully etched.

It should be noted that the computer controlling the substrate movementcan be local to the cluster architecture, or can be located external tothe cluster architecture in the manufacturing floor, or in a remotelocation and connected to the cluster architecture via a network.

Lithographic patterning of a film typically comprises some or all of thefollowing operations, each operation enabled with a number of possibletools: (1) application of photoresist on a workpiece, e.g., a substratehaving a silicon nitride film formed thereon, using a spin-on orspray-on tool; (2) curing of photoresist using a hot plate or furnace orother suitable curing tool; (3) exposing the photoresist to visible orUV or x-ray light with a tool such as a wafer stepper; (4) developingthe resist so as to selectively remove resist and thereby pattern itusing a tool such as a wet bench or a spray developer; (5) transferringthe resist pattern into an underlying film or workpiece by using a dryor plasma-assisted etching tool; and (6) removing the resist using atool such as an RF or microwave plasma resist stripper. In someembodiments, an ashable hard mask layer (such as an amorphous carbonlayer) and another suitable hard mask (such as an antireflective layer)may be deposited prior to applying the photoresist.

It is to be understood that the configurations and/or approachesdescribed herein are exemplary in nature, and that these specificembodiments or examples are not to be considered in a limiting sense,because numerous variations are possible. The specific routines ormethods described herein may represent one or more of any number ofprocessing strategies. As such, various acts illustrated may beperformed in the sequence illustrated, in other sequences, in parallel,or in some cases omitted. Likewise, the order of the above describedprocesses may be changed.

The subject matter of the present disclosure includes all novel andnonobvious combinations and sub-combinations of the various processes,systems and configurations, and other features, functions, acts, and/orproperties disclosed herein, as well as any and all equivalents thereof.

1. A method of forming an etched feature in a stack comprising adielectric material on a semiconductor substrate, the method comprising:(a) generating a first plasma comprising an etching reactant, exposingthe substrate to the first plasma, and partially etching the feature inthe stack; (b) after (a), depositing a protective film on sidewalls ofthe feature, wherein the protective film is deposited alongsubstantially the entire depth of the feature through a plasma assistedchemical vapor deposition reaction comprising exposing the substrate toa first deposition reactant and a section deposition reactant while thesubstrate is exposed to a second plasma, wherein the second plasmadrives a reaction that results in deposition of the protective film onsidewalls of the feature; (c) repeating (a)-(b) until the feature isetched to a final depth, wherein the protective film deposited in (b)substantially prevents lateral etch of the feature during (a), andwherein the feature has an aspect ratio of about 5 or greater at itsfinal depth.
 2. The method of claim 1, wherein the protective film isformed using precursors having a sticking coefficient of about 0.05 orless under conditions used to deposit the protective film.
 3. The methodof claim 1, wherein at the final depth, the feature has an aspect ratioof about 20 or greater, and a bow of about 20% or less.
 4. The method ofclaim 1, wherein the feature is formed while forming a VNAND device, andwherein the stack comprises alternating layers of (i) an oxide material,and (ii) a nitride material or polysilicon material.
 5. The method ofclaim 1, wherein the feature is formed while forming a DRAM device, andwherein the dielectric material comprises silicon oxide.
 6. The methodof claim 1, wherein the first deposition reactant comprises aboron-containing reactant.
 7. The method of claim 6, wherein the seconddeposition reactant comprises a nitrogen-containing reactant, andwherein the protective film comprises boron nitride.
 8. The method ofclaim 7, wherein (a) further comprises oxidizing the boron nitrideprotective film formed in (b) to form a boron oxide protective film. 9.The method of claim 8, wherein the first deposition reactant comprisesBCl₃, wherein the second deposition reactant comprises N₂ and H₂,wherein the etch reactant in (a) comprises one or more fluorocarbons andO₂, and further comprising during (a) oxidizing the boron nitrideprotective film to form boron oxide.
 10. The method of claim 1, whereinthe first deposition reactant comprises a silicon-containing reactant.11. The method of claim 10, wherein the second deposition reactantcomprises a nitrogen-containing reactant, and wherein the protectivefilm comprises silicon nitride.
 12. The method of claim 10, wherein thesecond deposition reactant comprises an oxygen-containing reactant, andwherein the protective film comprises silicon oxide.
 13. The method ofclaim 1, wherein the first deposition reactant comprises aboron-containing reactant and/or a silicon-containing reactant, andwherein the protective film comprises a boron-containing film and/or asilicon-containing film.
 14. The method of claim 13, wherein the firstdeposition reactant comprises BCl₃, wherein the second depositionreactant comprises N₂ and H₂, wherein the protective film formed in (b)is boron nitride, wherein the etching reactant in (a) comprises one ormore fluorocarbons and O₂, and further comprising during (a), convertingthe boron nitride protective film to boron oxide.
 15. The method ofclaim 1, wherein the stack comprises alternating layers of siliconnitride and silicon oxide, and wherein after a first iteration of(a)-(c): (i) when the feature etched in (a) is being etched in siliconnitride, the protective film formed in a previous iteration of (b) andprotecting the sidewalls during (a) comprises silicon oxide, and (ii)when the feature etched in (a) is being etched in silicon oxide, theprotective film formed in a previous iteration of (b) and protecting thesidewalls during (a) comprises silicon nitride.
 16. The method of claim1, wherein the feature has an aspect ratio of about 50 or greater. 17.The method of claim 1, wherein (a) and (b) are repeated at least onetime.
 18. An apparatus for forming an etched feature in dielectricmaterial on a semiconductor substrate, the apparatus comprising: one ormore reaction chambers, wherein at least one reaction chamber isdesigned or configured to perform etching, and wherein at least onereaction chamber is designed or configured to perform deposition, eachreaction chamber comprising: an inlet for introducing process gases tothe reaction chamber, an outlet for removing material from the reactionchamber, and a plasma source; and a controller having instructions for:(a) generating a first plasma comprising an etching reactant, exposingthe substrate to the first plasma, and partially etching the feature inthe dielectric material, wherein (a) is performed in the reactionchamber designed or configured to perform etching; (b) after (a),depositing a protective film on sidewalls of the feature through aplasma assisted chemical vapor deposition reaction comprising exposingthe substrate to a first deposition reactant and a section depositionreactant while the substrate is exposed to a second plasma, wherein thesecond plasma drives a reaction that results in deposition of theprotective film on sidewalls of the feature, wherein the protective filmis deposited along substantially the entire depth of the feature, andwherein (b) is performed in the reaction chamber designed or configuredto perform deposition; (c) repeating (a)-(b) until the feature is etchedto a final depth, wherein the protective film deposited in (b)substantially prevents lateral etch of the feature during (a), andwherein the feature has an aspect ratio of about 5 or greater at itsfinal depth.
 19. The apparatus of claim 18, wherein the reaction chamberdesigned or configured to perform etching is the same reaction chamberdesigned or configured to perform deposition, such that both (a) and (b)occur in the same reaction chamber.
 20. The apparatus of claim 18,wherein the reaction chamber designed or configured to perform etchingis different from the reaction chamber designed or configured to performdeposition, and wherein the controller further comprises instructions totransfer the substrate between the reaction chamber designed orconfigured to perform etching and the reaction chamber designed orconfigured to perform deposition.